200 GHz Interconnects for InP-on-BiCMOS Integration

I. Ostermay1, F.-J. Schmueckle1, R. Doerner1, A. Thies1, W. Heinrich1, O. Krueger1, V. Krozer1, T. Jensen1, T. Kraemer1, M. Lisker2, A. Trusch2, E. Matthus2, Y. Borokhovych2, B. Tillack2

Published in:

IEEE MTT-S Int. Microw. Symp. Dig., Seattle, USA, Jun 2-7, WE2G-1 (2013).

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Abstract:

In order to combine the advantages of both InP-HBT and SiGe-BiCMOS technology, a 3D integration approach has been developed based on the transferred-substrate concept with BCB wafer bonding. Using this process vertical interconnects are realized that exhibit excellent broadband transmission properties up to 220 GHz. Insertion loss remains below 0.5 dB up to W-band and 1 dB to 220 GHz. The interconnects can be described with good accuracy by 3D EM simulation over the full frequency range.

1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
2 IHP Frankfurt (Oder), Im Technologiepark 25, 15236 Frankfurt (Oder), Germany

Index Terms:

BiCMOS integrated circuits, InP integrated circuits, monolithic integrated circuits, three-dimensional integrated circuits, wafer scale integration, interconnects.