220-325 GHz high-isolation SPDT switch in InP DHBT technology

T. Shivan1, M. Hossain1, D. Stoppel1, N. Weimann1,2, S. Boppel1, R. Doerner1, W. Heinrich1 and V. Krozer1,3

Published in:

Electron. Lett., vol. 54, no. 21, pp. 1222-1224 (2018).

Copyright © The Institution of Engineering and Technology 2018. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IET.


A broadband single-pole-double-throw (SPDT) switch is presented covering 220-325 GHz in 800 nm transferred substrate InP DHBT technology. The SPDT switch configuration employs shunt-topology. The circuit achieves an isolation of >36 dB within the band with very low DC power of 9 mW, benefitting from the low intrinsic capacitance of the transistors. This is the highest reported isolation for wideband SPDT switches covering 220-325 GHz. This three-stage SPDT switch also demonstrates the highest isolation of 12 dB per stage in this frequency range.

1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany
2 Universität Duisburg-Essen, Duisburg, Germany
3 Johann Wolfgang Goethe-Universität, Frankfurt am Main, Germany