An Active Balanced Up-Converter Module in InP-on-BiCMOS Technology

M. Hossain1, C. Meliani2, M.I. Schukfeh1, N. Weimann1, M. Lisker2, V. Krozer1, W. Heinrich1

Published in:

IEEE MTT-S Int. Microw. Symp. Dig., Honolulu, USA, Jun. 4-9, pp. 953-956 (2017).

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This paper presents an active up-converter realized as hetero-integrated module in InP-on-BiCMOS technology. It consists of a fundamental Voltage Controlled Oscillator (VCO) in 0.25 µm BiCMOS technology and a frequency multiplier followed by double balanced Gilbert mixer cell in 0.8 µm transferred substrate (TS) InP-HBT technology, which is integrated on top of the BiCMOS MMIC. The fundamental VCO operates at 54 GHz. The module achieves a single-sideband (SSB) power up-conversion gain of 2.5 dB and -3.5 dB at 82 GHz and 106 GHz, respectively. It exhibits > 25 GHz IF bandwidth. To the knowledge of the authors, this is the first heterointegrated module reported so far.

1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
2 IHP GmbH, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany

Index Terms:

InP double heterojunction bipolar transistor (DHBT), monolithic microwave integrated circuit (MMIC), millimeter wave (mm-wave), Marchand balun, transferred-substrate process (TS).