BCB encapsulation for high power AlGaN/GaN-HFET technology

P. Kurpas, O. Bengtsson, S.A. Chevtchenko, I. Ostermay, R. Zhytnytska, W. Heinrich, J. Würfl

Published in:

Int. Conf. on Compound Semiconductor Manufacturing Technology (CS ManTech 2013), New Orleans, USA, May 13-16, paper 117 (2013).

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GaN-HEMT technology with BCB encapsulation was successfully established without compromises in DC and RF performance. It was shown that same power levels of 6 W/mm and high efficiencies higher than 60% at 2 GHz can be achieved with BCB encapsulation as compared with reference air-bridge power bar design. However, transistor´s dynamic behavior especially with high Al-content barrier layer is still a topic of investigations.

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany


AlGaN/GaN HFET, HEMT, BCB, passivation, dispersion effects, processing