DFB Laser Diodes Based on GaN Using 10th Order Laterally Coupled Surface Gratings

J.H. Kang1, H. Wenzel1, V. Hoffmann1, E. Freier1, L. Sulmoni2, R.-S. Unger1, S. Einfeldt1, T. Wernicke2, and M. Kneissl1,2

Published in:

IEEE Photonics Technol. Lett., vol. 30, no. 3, pp. 231-234 (2018).

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Single longitudinal mode emission of laterally coupled distributed-feedback (LC-DFB) laser diodes (LDs) based on InGaN/GaN multiquantum-well structures containing 10th-order surface Bragg gratings with V-shaped grooves is demonstrated. The gratings were fabricated alongside a 2-µm-wide contact stripe by i-line stepper lithography and inductively coupled plasma etching. A single peak emission at 404.6 nm with a full-width at half-maximum of 0.04 nm was achieved at an output power of about 46 mW under pulsed laser operation. The shift of the lasing wavelength of LC-DFB LDs in the temperature range from 22 °C to 45 °C was around three times smaller than that of comparable ridge waveguide Fabry-Pérot LDs.

1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
2 Institut für Festkörperphysik, Technische Universität Berlin, 10623 Berlin, Germany

Index Terms:

AlInGaN, distributed-feedback laser diodes, laterally coupled surface gratings.