Dual-wavelength monolithic Y-branch distributed Bragg reflection diode laser at 671 nm suitable for shifted excitation Raman difference spectroscopy
Laser Photonics Rev., vol. 7, no. 4, pp. L30-L33 (2013).
Copyright © 2013 by WILEY-VCH Verlag GmbH & Co. KGaA,Weinheim. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from WILEY-VCH Verlag GmbH & Co. KGaA,Weinheim.
A dual-wavelength monolithic Y-branch distributed Bragg reflection (DBR) diode laser at 671 nm is presented. The device is realized with deeply etched surface DBR gratings by one-step epitaxy. A maximum optical output power of 110 mW is obtained in cw-operation for each laser cavity. The emission wavelengths of the device are 670.5 nm and 671.0 nm with a spectral width of 13 pm (0.3 cm-1) and a mean spectral distance of 0.46 nm (10.2 cm-1) over the whole operating range. Together with a free running power stability of ± 1.1% this most compact diode laser is ideally suited as an excitation light source for portable shifted excitation Raman difference spectroscopy (SERDS).
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
Diode laser; distributed Bragg reflector (DBR); 671 nm; Y-branch; Raman spectroscopy; shifted excitation Raman difference spectroscopy; SERDS