Effect of index-antiguiding on the threshold of GaN-based narrow ridge-waveguide laser diodes
Conference on Lasers and Electro Optics (CLEO), San Jose, USA, Jun. 9-14, p. CF1F.3 (2013).
© Copyright 2013 The Optical Society. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the Optical Society.
The effect of index antiguiding on GaN-based blue and violet laser diodes has been investigated. Strong antiguiding effects are proposed to be responsible for the large dependence of the threshold current density on the ridge etch depth.
1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
2 Fraunhofer Institute for Applied Solid State Physics IAF, Tullastr. 72, 79108 Freiburg, Germany
3 Institute for Solid State Physics, Technical University Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
(140.2020) Diode Lasers; (140.7300) Visible Lasers