Efficiency optimization of high power diode lasers at low temperatures
European Conf. on Lasers and Electro-Optics and Int. Quantum Electronics Conf. (CLEO®/Europe-IQEC), Munich, Germany, May 12-16, poster CL-P.28-MON (2013).
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The authors present studies which assess the benefit of low temperature operation of long cavity (L = 4 mm) broad-area lasers with the goal of achieving both high powers and high efficiencies. To this end, it was investigated the temperature dependence of 975 nm lasers with a single InGaAs quantum well embedded in a 2.4 μm thick waveguide with low aluminium content (Al0.13Ga0.87As).
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany