Efficient active multiplier-based signal source for >300 GHz system applications
Electron. Lett., vol. 55, no. 23, pp. 1220-1221 (2019).
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This Letter presents a 300 GHz signal source, realised using an 800 nm transferred-substrate InP double heterojunction bipolar transistor process. The source is based on an active frequency tripler. It delivers -1.6 dBm peak output power at 306 GHz. The DC consumption is only 36 mW, which corresponds to 2% conversion efficiency. The measured tripler achieves more than 30 GHz bandwidth and exhibits very low unwanted harmonics. The chip area of the source is only 0.94 × 0.84 mm2.
1 Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany
2 Goethe University of Frankfurt am Main, Max-von-Laue-Strasse 1, 60438 Frankfurt am Main, Germany