GaN Digital Outphasing PA
49th European Microwave Conference (EuMC 2019), Paris, France, Oct. 1-3, pp. 551-554 (2019).
Copyright © 2019 EuMA. All rights reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the EuMA.
This paper presents a novel GaN-based digital outphasing power amplifier for 800 MHz. The PA reaches a maximum output power of 5.8 W at 30 V final-stage drain supply voltage. A novel output combiner circuit is used and efficiency is improved by resonant commutation of the final-stages and optimized driver circuits for the two GaN push-pull final-stages. Power added efficiencies (PAE) of 59% and 25% at 0 dB and 10 dB power back-off (PBO), respectively, are achieved.
Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
Digital, power amplifiers, outphasing, resonant commutation, class-D, class-S, GaN.