Highly reliable silicon carbide photodiodes for visible-blind ultraviolet detector applications
J. Mater. Res., vol. 28, no. 1, pp. 33-37 (2013).
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Highly efficient polytype 4H silicon carbide (4H-SiC) p−n diodes for ultraviolet (UV) light detection have been fabricated, characterized, and exposed to high-intensity mercury lamp irradiation (up to 17 mW/cm2). The behavior of the photocurrent response under UV light irradiation using a low-pressure mercury UV-C lamp (4 mW/cm2) and a medium-pressure mercury discharge lamp (17 mW/cm2) has been studied. We report on long-term UV photoaging tests performed for up to 22 mo. Results demonstrate the robustness of SiC photodiodes against UV radiation. The devices under test showed an initial burn-in effect, i.e., the photocurrent response dropped by less than 5% within the first 40 h of artificial UV aging. Such burn-in effect under UV stress was also observed for previously available polytype 6H silicon carbide (6H−SiC) p−n photodetectors. After burn-in, no measurable degradation has been detected, which makes the devices excellent candidates for high irradiance UV detector applications.
1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
2 Leibniz-Institut für Kristallzüchtung, 12489 Berlin, Germany
3 Physikalisch-Technische Bundesanstalt Braunschweig und Berlin, 4.1 Photometry and Applied Radiometry, 38116 Braunschweig, Germany
4 sglux GmbH, 12489 Berlin, Germany
PHOTODIODES, SiC, silicon, Silicon carbide, SILICON-CARBIDE.