Impact of AlN nucleation layer on strain in GaN grown on 4H-SiC substrates

E. Cho, A. Mogilatenko, F. Brunner, E. Richter, M. Weyers

Published in:

J. Cryst. Growth, vol. 371, pp. 45–49 (2013).

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Abstract:

The impact of AlN nucleation layers on the strain evolution in a subsequent GaN layer was investigated by in-situ wafer curvature measurement. It is shown that growth temperature and thickness of the AlN nucleation layer strongly influence the built-in strain and crystalline quality of GaN. A two-step AlN growth procedure leads to a decrease of compressive strain as well as the reduction of the total dislocation density (6-9×108 cm-2) in the overgrown GaN layer. TEM analysis reveals different relaxation mechanisms of GaN in v-pits and on flat surfaces of AlN. With a two-step AlN nucleation layer a low wafer bow can be achieved together with a low dislocation density.

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany

Keywords:

A1. Characterization; A1. Stress; A1. Nucleation; A3. Metalorganic vapor phase epitaxy; B1. Nitrides.