In-situ photoluminescence measurements during MOVPE of GaN and InGaN in a CCS reactor

C. Prall1, C. Kaspari2, A. Knauer3, K. Haberland2, M. Weyers3, and D. Rueter1

Published in:

tm - Technisches Messen, vol. 84, no. 11, pp. 747-752 (2017).

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Gallium Nitride (GaN) and Indium Gallium Nitride (InGaN) have become important semiconductor materials for the LED lighting industry. Recently, a photoluminescence (PL) technique for direct in-situ characterization of GaN and InGaN layers during epitaxial growth in a planetary metalorganic vapor phase epitaxy (MOVPE) reactor was reported. The PL signals reveal - at the earliest possible stage - information about current layer thickness, temperature, composition, surface roughness, and self-absorption. Thus, the PL data is valuable for both controlling and optimizing the growth parameters, thereby promising both better devices and a better yield for the LED industry. This technical report describes an extension of this PL technique to close coupled showerhead (CCS) reactors with narrow optical viewports. In contrast to the wide aperture optics in previous investigations, a compact and all-fiber optical probewithout voluminous lens optics, filter elements or beam splitters was used.

1 Institute of Measurement Engineering and Sensor Technology, University of Applied Sciences Ruhr West, PO Box 10 07 55, 45407 Muelheima. d. Ruhr, Germany
2 LayTec AG, Seesener Str. 10-13, 10709 Berlin, Germany
3 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany


Process characterization, photoluminescence, metalorganic vapor phase epitaxy, Indium Gallium Nitride, light emitting diodes.