Lateral and vertical power transistors in GaN and Ga2O3

O. Hilt1, E. Bahat Treidel1, M. Wolf1, C. Kuring2, K. Tetzner1, H. Yazdani1, A. Wentzel1, J. Würfl1

Published in:

IET Power Electron., vol. 12, no. 15, pp. 3919-3927 (2019).

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Abstract:

Vertical silicon carbide transistors ant lateral gallium nitride (GaN) transisitors for power-electronic applications currently target applications with different voltage and power ratings. Meanwhile, research and development activities continue on vertical GaN transistors and new gallium oxide (Ga2O3) transistors. What are their perspectives in the application and how do they compete against each other and against established transistor technologies? This study discusses the specific characteristics of lateral and vertical GaN and Ga2O3 transistors to assess their strengths and weaknesses.

1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany
2 Chair of Power Electronics, Technische Universität Berlin, Einsteinufer 19, 10587 Berlin, Germany