Mode-Locked semiconductor laser with controllable intracavity dispersion and absorption

J.C. Balzer1, B. Döpke1, A. Klehr2, G. Erbert2, G. Tränkle2, M.R. Hofmann1

Published in:

European Conf. on Lasers and Electro-Optics and Int. Quantum Electronics Conf. (CLEO®/Europe-IQEC), Munich, Germany, May 12-16, poster CL-P.23-MON (2013).

© Copyright 2013 IEEE - All Rights Reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.


In the scope of this work we will present the influence of intracavity absorption in interplay with intracavity dispersion. The goal is to get a deeper insight into the physical effects of mode-locking of semiconductor laser diodes. This helps to verify theoretical models and possibly allows generating pulses shorter than 200 fs.

1 Lehrstuhl für Photonik und Terahertztechnologie, Ruhr Universität Bochum, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany