Modeling of InP HBTs in Transferred-Substrate Technology for Millimeter-Wave Applications

T.K. Johansen1, M. Rudolph2,3, T. Jensen3, T. Kraemer3, N. Weimann3, F. Schnieder3, V. Krozer3, and W. Heinrich3

Published in:

Proc. 8th European Microwave Integrated Circuits Conf. (EuMIC 2013), Nuremberg, Germany, Oct. 6-8, pp. 280-283 (2013).

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In this paper, the modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. At first, a direct parameter extraction methodology dedicated to III-V based HBTs is employed to determine the small-signal equivalent circuit parameters from measured S-parameters. It is shown that the model prediction of measured S-parameters can be improved in the millimeter-wave frequency range by augmenting the small-signal model with a description of AC current crowding. The extracted elements of the small-signal model structure are employed as a starting point for the extraction of a large-signal model. The developed largesignal model for the TS-HBTs accurately predicts the DC over temperature and small-signal performance over bias as well as the large-signal performance at millimeter-wave frequencies (77 GHz).

1 Technical University of Denmark, Department of Electrical Engineering, DK-2800 Kgs. Lyngby, Denmark
2 Brandenburg University of Technology, D-03046 Cottbus, Germany
3 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany


Heterojunction bipolar transistor (HBT), equivalent circuit modeling, parameter extraction, InP, transferred substrate.