MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs
Photonics Res., vol. 7, no. 5, pp. B7-B11, DOI: 10.1364/PRJ.7.0000B7 (2019).
© Copyright 2018-2019 Chinese Laser Press. All Rights Reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the Chinese Laser Press.
We report on AlGaN-based tunnel heterojunctions grown by metalorganic vapor phase epitaxy enabling fully transparent UVC LEDs by eliminating the absorbing p-AlGaN and p-GaN layers. Furthermore, the electrical characteristics can be improved by exploiting the higher conductivity of n-AlGaN layers as well as a lower resistance of n-contacts. UVC LEDs with AlGaN:Mg/AlGaN:Si tunnel junctions exhibiting single peak emission at 268 nm have been realized, demonstrating effective carrier injection into the AlGaN multiple quantum well active region. The incorporation of a low band gap interlayer enables effective tunneling and strong voltage reduction. Therefore, the interlayer thickness is systematically varied. Tunnel heterojunction LEDs with an 8 nm thick GaN interlayer exhibit continuous-wave emission powers >3 mW near thermal rollover. External quantum efficiencies of 1.4% at a DC current of 5 mA and operating voltages of 20 V are measured on-wafer. Laterally homogeneous emission is demonstrated by UV-sensitive electroluminescence microscopy images. The complete UVC LED heterostructure is grown in a single epitaxy process including in situ activation of the magnesium acceptors.
1 Technische Universität Berlin, Institute of Solid State Physics, Hardenbergstr. 36, EW6-1, 10623 Berlin, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany