Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications

C. Fleurya, R. Zhytnytskab, S. Bychikhina, M. Cappriottia, O. Hiltb, D. Visallic, G. Meneghessod, E. Zanonid, J. Würflb, J. Derluync, G. Strassera, D. Poganya

Published in:

Microelectron. Reliab., vol. 53, no. 9-11, pp. 1444-1449 (2013).

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Abstract:

We analyse vertical breakdown signatures in normally-off and normally-on AlGaN/GaN HEMTs on Si and SiC substrate for power applications. The probability distribution function of the breakdown voltage VBD values shows mostly a bimodal distribution that is characteristic for substrate/epitaxy type and bias polarity. Different types of distribution functions are tested. The vertical breakdown is found to be a time dependent phenomenon and hypotheses for its initiation are discussed. Using backside infrared microscopy, we found that the breakdown occurs in localized spots, related to current filaments. Failure localisation under pulsed mode shows better spatial localisation compared to the DC conditions.

a Vienna University of Technology, Floragasse 7, A-1040 Vienna, Austria
b Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
c EpiGaN, Kempischesteenweg 293, B-3500 Hasselt, Belgium
d University of Padova, Via Gradenigo 6/B, 35131 Padova, Italy