Tunable RF GaN-Power Transistor Implementing Impedance Matching Networks Based on BST Thick Films

H. Maune1, O. Bengtsson2, F. Gölden3, M. Sazegar1, R. Jakoby1 and W. Heinrich2

Published in:

42nd European Microwave Conf. (EuMC 2012), Amsterdam, The Netherlands, Oct. 28 - Nov. 2, pp. 1206-1209 (2012).

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Abstract:

In this paper, a tunable power amplifier is demonstrated based on a GaN-transistor and a matching network based on Barium-Strontium-Titanate (BST) thick film technology. A single unit transistor cell of the powerbar provides an output power of almost 32dBm with 11 dB gain in deep class-AB operation with a maximum efficiency of 30% at 2 GHz. The tunable matching network makes use of varactors based on BST thick film technology with integrated bias decoupling.

1 Institute for Microwave Engineering and Photonics, Technische Universität Darmstadt, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
3 SHF Communication Technologies AG, Berlin, Germany

Keywords:

Tunable Components, Ferroelectrics, Power Amplifier, RF Adaptivity, Adaptive Matching.