Wideband 80 W Balanced Power Amplifier for ISM and LTE-Bands

S. Paul, S. Preis, W. Heinrich, and O. Bengtsson

Published in:

10th German Microwave Conference (GeMiC 2016), Bochum, Germany, Mar. 14-16, ISBN 978-3-9812668-7-0, pp. 437-440 (2016).

© Copyright 2016 IEEE - All Rights Reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

Abstract:

An 80 W balanced GaN-HEMT power amplifier for 2.45-2.70 GHz using branch-line couplers is presented in this paper. Its performance is compared to a single-transistor solution. The analysis shows that a balanced amplifier is favorable because it simplifies measures to ensure electrical stability and allows better heat sinking.

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany

Keywords:

GaN-HEMTs; power amplifiers; branch-line couplers.