Joint Lab - the Cooperation

 The Joint Lab Power Electronics, a cooperative initiative between FBH and Technische Unversität Berlin, Power Electronics Field of Expertise at the Institute for Energy and Automation Technology, bridges technological development of GaN power switching technology at FBH to power-electronic circuit architectures and the corresponding characterization technologies - an expertise of TU-Berlin. The combination of know-how in circuit architecture and GaN power device technology enables an optimum exploitation of the inherent advantages of GaN power switching devices. It builds the pre-requisite for cutting-edge, high efficient, compact and low-weight energy converters.

  • GaN half-bridge module
    [+] Hybrid-integrated half-bride with GaN transistors and GaN diodes
  • GaN half-bridge with gate driver
    [+] Half-bridge combined with high- and low-side driver stages
  • GaN transistor IR image
    [+] Infrared photograph of an operating GaN power transistor
Bi-directional output characteristics
Pulsed bi-directional output characteristics of a normally-off GaN power transistor
GaN-transistor switching transient
Measured and simulated turn-on properties of a GaN power transistor in system environment

The Joint Lab is dedicated to characterization, device modelling, and circuit topology adjusted to GaN power transistors. Characterization mainly addresses dynamic and thermal properties of GaN power FETs related to practical in-system operation conditions. Goal is to provide an exact description of power transistors for designing and modelling power electronic circuits and for establishing design rules for inherently safe operation.

A newly developed large-signal model based on lumped elements already provides a very good description of turn-on and turn-off transients of GaN power switching transistors and builds the baseline for related circuit designs.

Integrated half-bridges assembled on AlN substrates using chip-on-board techniques already demonstrated 600 W output power at an efficiency of 97%. They contain GaN power transistors with 75 mΩ on-state resistance combined with GaN free-wheeling Schottky diodes and operate at 120 kHz and 200 V bias.