InP HBT technology is an ideal candidate for microwave applications in the terahertz range. The FBH uses a transfer substrate process to successfully suppress significant parasitic effects. For further improvements, an in-house diamond wafer bonding process was developed to enhance the thermal management of the wafer.
Research News 2020
The next-generation wireless communication infrastructure demands for high flexibility, low cost and high efficiency. The FBH has developed a digital outphasing power amplifier module, an important step towards the all-digital transmitter chain.
FBH demonstrates new performance records of diode laser bars at the operation point of 1 kW. One design approach increased the conversion efficiency up to 66%, while an alternative approach reduced the lateral divergence down to 8.8°, both best-in-class results.
The FBH presents a new, compact and monolithically integrated tunable dual-wavelength laser design based on gallium arsenide. The device parameters were optimized by means of sophisticated simulation tools.