Research

News

  • Source: Smart2Zero, 02.12.2019

    Aluminium-based semiconductors promise even greater efficiency

    Highly efficient power semiconductors should create the conditions for a wide range of new applications from electromobility to artificial intelligence. This is the aim of the recently launched joint project "Power transistors based on AlN (ForMikro-LeitBAN)", which is coordinated by the Ferdinand-Braun-Institut for highest frequency technologies in Berlin.

  • Source: Compound Semiconductor, 29.11.2019

    High-performance Devices For The Digital Transformation

    Smart energy supply, electro-mobility, broadband communication systems and applications of artificial intelligence - the number of interacting and interconnected systems is constantly growing. At the same time, the responsible use of resources is a crucial social challenge.

  • Source: Semiconductor Today, 29.11.2019

    FBH-led project ‘power transistors based on AlN (ForMikro-LeitBAN)’ launched

    Coordinated by the Ferdinand-Braun-Institut of Berlin, Germany, the recently launched joint project ‘power transistors based on AlN (ForMikro-LeitBAN)’ aims to develop highly efficient power semiconductors that can pave the way for a wide range of novel applications – from e-mobility to artificial intelligence.

  • Source: Semiconductor Today, 15.11.2019

    Germany-funded ‘ForMikro-GoNext’ project investigating vertical gallium oxide devices for power electronics

    In the recently launched joint project ‘ForMikro-GoNext’ - funded by Germany’s Federal Ministry of Education and Research (BMBF) with about €2m over 4 years - the Leibniz-Institut für Kristallzüchtung (IKZ), the Ferdinand-Braun-Institut Leibniz-Institut für Höchstfrequenztechnik (FBH), the University of Bremen and industrial partners ABB Power Grids Switzerland Ltd and Aixtron SE are investigating beta-gallium oxide (β-Ga2O3) using a new vertical device architectures to exploit its properties for transistors more effectively.

  • FBH research: 12.11.2019

    High-power lasers with buried implantation for current confinement

    The FBH has fabricated broad area lasers using a 2-step epitaxial growth process with an intermediate implantation of ions outside of the active laser stripe. The second growth step removes the crystal damage and activates the implanted dopants so that highly resistive regions are formed.

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Recruiting and securing skilled personnel plays a vital role at the institute - FBH coordinates projects related to:

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