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Mikrowellen-Plasmaquelle

Mikrowellen-Plasmaquelle aus dem FBH zur Hauttherapie

Konzentrationen im Plasma

Die Konzentration von Stickstoffmonoxid und Ozon kann über den Prozessgasfluss eingestellt werden.

Logo

Logo of Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik

Prof. Dr. Günther Tränkle

Director of Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik

Prof. Dr. Günther Tränkle

Director of Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik

Prof. Dr. Günther Tränkle

Director of Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik

Ferdinand-Braun-Institut - Main Entrance

Ferdinand-Braun-Institut - Solar Wall

Cladding of FBH´s laboratory hall with innovative CIS (copper, indium, sulphide) solar cells from Sulfurcell. The solar plant is run by Dachland company.

Metal Organic Vapor Phase Epitaxy (MOVPE) - Planetary Reactor

Loading of planetary reactor AIX2400G3. Substrate wafers (InP/GaAs) are put inside a sluice and seperately placed into the reactor. This reactor type allows for deposition of up to five 4" wafers at the same time.

Metal Organic Vapor Phase Epitaxy (MOVPE) - Horizontal Reactor

Horizontal reactor AIX200/4 in operation. Heating of the quartz glass reactor and the substrates inside is carried out with IR lamps with a characteristic process temperature of about 700°C for GaAs based epitaxy.

Cleanroom - Bonder

In order to fabricate a device, the electric source has to be connected via gauzy gold wires (bonding is the connection of two and more devices or wafers by means of various chemical and physical effects).

On-wafer Microwave Measurement

Measurement of single circuits with special probe tips, which only insignificantly distort the RF properties of the circuits. The distance of the contacts is usually in the range of only 50-150 micrometer.

GaN Wafer with HEMT Transistors

High electron mobility transistors (HEMT) based on gallium nitride hetero structures (GaN) on 2" silicon carbide substrates (SiC). The transistors are developed for next-generation equipment in mobile communications and further applications.

Gallium Nitrid Based UV LEDs

These LEDs in the ultraviolet spectral range are supposed to be used for water disinfection.

Master Oscillator Power Amplifier (MOPA)

Hybrid integrated oscillator and amplifier which generates laser radiation of highest brilliance: an oscillator laser (usually a DFB or DBR laser), a tapered amplifier and a micro lens as coupling element are mounted on an silicon optical micro bench.

Smaller than a matchbox: Mikrosystems Light Source for "FreshScan"

Hybrid integrated diode laser in external cavity on micro-optical bench for the "FreshScan" project. With this diode laser system Raman spectra can be measured, delivering a kind of optical fingerprint depending on the freshness of meat. In the future, this laser shall be integrated in a portable handheld system for flexible use.

Broad Area Laser

Broad area laser diode mounted on heatsink.

Laser Stack - Pump Module for X-Ray Laser

These diode laser stacks allow for a novel concept for X-ray lasers. Advantages are e.g. the intensive short-waved light, the comparably small size and the required low pump laser energy. In addition, a diode laser based X-ray laser will need only the area of several desks. The diode laser stack consists of vertically stapled laser bars up to a power range of 1.2 kW with an efficiency of 50%. The design and the parameters of these diode laser stacks were optimized in order to achieve an easier and more stable mounting as well as the simple and efficient coupling of the branch circuit in glass fiber.

Energy Efficient Class S Amplifier for Mobile Communications

Innovative, digital amplifier concept which delivers international record values and significantly reduces energy demand of wireless LAN and base stations in mobile communications. The module is based on a gallium nitride switching amplifier IC (integrated circuit). For the first time worldwide, such ICs for bit rates in the GHz range were demonstrated at the FBH.

Gallium Nitride (GaN) Power Amplifier

Monolithic integrated GaN power amplifier for the X-band range, mounted as a module. The MMIC delivers more than 10 W output power with 16 dB gain at 8 GHz. Such amplifiers are attractive for a great variety of applications in radar and satellite communication.

Microwave Plasma at Atmospheric Pressure

The Ferdinand-Braun-Institut developed a novel plasma source with which air can be sort of lighted generating a cold flame. This source shall be used in the future e.g. for the treatment of skin diseases.

Wafer with HBTs Based on InP - Flexible Version

Transferred substrate wafer with hetero-bipolar transistors based on Indium-Phosphide in flexible version.