Flip-Chip Approach for 500 GHz Broadband Interconnects
IEEE Trans. Microwave Theory Tech., vol. 65, no. 4, pp. 1215-1225 (2017).
Copyright © 2017 IEEE - All Rights Reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
This paper presents the design and characterization of a broadband transition in the range dc to 500 GHz using the flip-chip concept. The extremely wideband performance is attained by optimizations in both process technology and electromagnetic design. On the process technology side, a thinfilm process with scaled dimensions of 10 µm for via diameter and 2 µm bump height is employed for the chip and the carrier substrate. On the electromagnetic side, in addition to impedance matching, a detailed analysis of parasitic modes is considered for the design. The measurement results show less than 0.9-dB insertion loss per transition at 500 GHz and reflections below -18 dB over the entire dc to 500 GHz band.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik im Forschungsverband Berlin e.V., D-12489 Berlin, Germany
Benzocyclobutene (BCB), flip chip, interconnect, terahertz.