Dates

International Semiconductor Laser Conference

Meet FBH scientists at the ISLC 2014.



Conference:07.-10.09.2014 Palma de Mallorca (Spain)


Wide Bandgap Semiconductor and Components Workshop

FBH at the 7th Wide Bandgap Semiconductor and Components Workshop



Conference:11.-12.09.2014 Frascati (Italy)


5. Mädchen-Technik-Kongress

... register now for the Mädchen-Technik-Kongress 2014!



October 10, 2014, 9:15 am – 3:30 pm, Science & Technology Park Adlershof


... translating ideas into innovation

Welcome to the Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik!

hybrid-integrated diode laser modules for display technology

We research cutting-edge technologies in the fields of microwave technology and optoelectronics. For customers in industry and science we provide high-frequency devices and circuits for communication and sensor technology as well as high-power diode lasers for materials processing, laser technology, medical technology and high precision metrology.

As a competence center for III/V-compound semiconductors we operate industry-compatible and flexible clean room laboratories with 2"-4" gas phase epitaxy units and a 2"-4" process line.

News

UV-Halbleiterlasersysteme für lithographische Anwendungen

Mit der rasanten Entwicklung von Galliumnitrid-basierten Halbleiterlasern, ergibt sich die Möglichkeit einer kompakten und wartungsarmen Laserlichtquelle hoher Brillanz im nahen UV.



Source: www.photonikforschung.de, August 2014


Digital Doherty Tx for Future SDR Mobile Infrastructures

Digital power amplifier (PA) concepts are highly attractive, especially when it comes to optimizing wireless infrastructure. Processing all signals digitally up to the final stage would simplify the system set-up, reducing both space requirements and energy consumption. Recently, NEC (Japan) and FBH proposed and verified a new digital transmitter architecture. For the first time, the Doherty concept was proven for digital signals, successfully transferring it to the "digital world".



FBH research: 26.08.2014


75 mOhm / 600 V normally-off switching transistors on SiC and Si substrates

GaN-based high-voltage power switching transistors enable efficient power converters with increased power density. The FBH has now successfully transferred its 600 V technology for normally-off power switching transistors from the GaN-on-SiC platform to 4" GaN-on-Si wafers - an essential precondition for competitive manufacturing costs. DC measurements demonstrated comparable characteristic values.



FBH research: 14.08.2014