Dates

"MINT anders" – Innovation und Experimente im Bildungssystem

Das FBH ist auf dem 8. MINT-Tag im Bundesministerium für Wirtschaft und Energie vertreten.



Conference: 30.04.2015, Berlin (in German)


CLEO 2015 - Laser Science to Photonic Applications

 Meet FBH scientists at the Conference on lasers and electro-optics.



Konferenz: 10.-15.05.2015, San Jose (USA)


ISPSD 2015

At the International Symposium on Power Semiconductor Devices and ICs presents the FBH a lecture



Conference:10.-14.05.2015, Hong Kong


CS Mantech

FBH presents research results at the International Conference on Compound Semiconductor Manufacturing Technology



Conference:18.-21.05.2015, Arizona (US)


IMS 2015

FBH at the International Microwave Symposium

 

 



Conference: 17.-22.05.2015, Phoenix (US)


FBH at Laser World of Photonics and CLEO Europe

Visit us at the joint booth Berlin-Brandenburg in hall B3, booth 359 and at the accompanying conference.



Trade fair and conference: 21.-25.06.2015, Munic


... translating ideas into innovation

Welcome to the Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik!

hybrid-integrated diode laser modules for display technology

We research cutting-edge technologies in the fields of microwave technology and optoelectronics. For customers in industry and science we provide high-frequency devices and circuits for communication and sensor technology as well as high-power diode lasers for materials processing, laser technology, medical technology and high precision metrology.

As a competence center for III/V-compound semiconductors we operate industry-compatible and flexible clean room laboratories with 2"-4" gas phase epitaxy units and a 2"-4" process line.

News

German researchers make semiconductor laser to test relativity

Diode laser travels on FOKUS rocket to see whether clocks run differently in space.



Source: Compund Semiconductor, 23.04.2015


DFB laser module designed to test subtleties of General Relativity

Researchers at Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH; Berlin, Germany) have designed and constructed a microintegrated semiconductor-laser module that is part of an atomic clock specifically designed to test the subtleties of Einstein's General Relativity theory.



Source: Laser Focus World, 23.04.2015


Girls' Day at FBH

Today the FBH opened its doors for the Girls'Day. The girls learned from the institute's trainees and junior researchers about their world of employment and gained information about FBH's tiny, powerful lasers.



FBH news: 23.04.2015


Examining Einstein – precise experiments using lasers in space

Tests carried out in zero-gravity on board the FOKUS research rocket. Successful demonstration of technology for the QUANTUS mission.



Press release: 23.04.2015


Photonics and Optoelectronics Network PHOENIX

First collaborative projects initiated with Berlin grants: violet-emitting laser systems in collaborative project "BriVi" and fast, intrinsic vertical GaN switching transistors for directly controlling diode lasers (PioneerGaN).



Source: Optik & Photonik, 2/2015


HiPoSwitch Project Develops High-Efficiency, Lightning-Fast Gallium Nitride Power Switches

The European HiPoSwitch project has developed novel nitride (GaN) transistors for high efficiency, high speed gallium nitride power switches.



Source: AZO Materials, 17.04.2015


HiPoSwitch project completed with development of fast, efficient normally-off GaN-on-Si power transistors

Lasting from September 2011 to end-August 2014 with a budget of €5.57m (including €3.58m of funding from the European Union), the recently completed three-year project HiPoSwitch ('High Power Switch') has developed prototype fast, high-efficiency power switches using gallium nitride (GaN) operating in enhancement-mode.



Source: Semiconductor Today, 15.04.2015


EU-Projekt HiPoSwitch für GaN-Komponenten

Im Rahmen des EU-Verbundprojektes HiPoSwitch wurden effiziente und schnelle Galliumnitrid-Leistungsschalter entwickelt. Sie sind die Basis für energiesparende, kompakte und leichte Leistungskonverter.



Source: Channel-E, 15.04.2015 (in German)


Fast, efficient switching – thanks to HiPoSwitch

Power converters use power transistor switches as key components to accomplish power conversion. Lightning-fast semiconductor switches able to operate these kinds of converters more efficiently have now been developed in the recently completed EU group project called HiPoSwitch. 



Source: Phys.org, 15.04.2015


Fast, efficient switching – thanks to HiPoSwitch

HiPoSwitch, an EU group-project, has successfully developed lightning-fast, high-efficiency gallium nitride power switches. These are essential for producing energy-efficient, compact, and light-weight power converters that make electrical energy more useable. The market potential is enormous, since these converters are found in nearly every electronic device.



Press release: 15.04.2015


Demonstration of GaN-based near UV laser diodes

The Fedinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH) has developed low-threshold gallium nitride (GaN) based edge-emitting laser diodes (LDs) emitting in the near ultraviolet spectral range.



Source: Laser Technik Journal, April 2015


Thermal characterization of AlGaN/GaN HEMTs on Si and n-SiC substrates

Channel temperature characterization of AlGaN/GaN devices is an important feature for reliability estimation and assessment of power switching losses. We present here a method to thermally characterize large AlGaN/GaN HFETs based on pulsed electrical measurements, performed in cooperation with TU Berlin. The results have then been correlated to ANSYS simulations.



FBH research: 02.04.2015